Project 3.1 Organic and Metal Oxide Field-Effect Transistors for Flexible Electronics
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Overview
This project is focused on developing organic and metal oxide semiconductors with hole and electron mobility values > 10 cm²/Vs, well beyond those of amorphous silicon. High mobilities will be accomplished through optimizing the electronic coupling between electro-active groups, potentially achieving band-type transport, and through minimizing reorganization energy and the effects of phonons. At the same time, CMDITR will work on controlling the orientation of ordered materials with anisotropic mobilities (crystals, liquid crystals and crystalline polymers) so that the direction of maximum mobility can be aligned correctly for the device geometry of interest. CMDITR foresees that the development of surface-modifying agents will help with this issue, as well as improving adhesion at organic/organic and inorganic/organic interfaces. At the same time, CMDITR will tailor optical (absorption) and electronic (electron affinity and ionization potential) properties for specific device applications. CMDITR will also develop new dielectric materials that can be coated into thin (< 200 nm) filmswith high dielectric strength (> 2 MV/cm), low leakage current (<1 µA/cm²), and high capacitance density (> 50 nF/cm²). Materials development will be integrated with research on the fabrication, characterization, and modeling of the key building blocks of organic circuits, including diodes, transistors, inverters for digital circuit/logic circuits, circuit drivers for active-matrix displays, and transistor amplifiers for analog applications.
Video Intro
<embed_document width="55%" height="400">http://depts.washington.edu/cmditr/mediawiki/images/3/3f/CMDITR101_Project3.1_Wilson.pdf</embed_document>
More information about this project can be found at:
http://www.stc-mditr.org/research/lsoe/projects.cfm